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BYT78 80510 VAL1Z EFM32 1H471 SP332CT 1004G 80006
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  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A Q
TIP33C
EPITAXIAL PLANAR NPN TRANSISTOR
B K
FEATURES
Complementary to TIP34C. Recommended for 45W 50W Audio Frequency Amplifier Output Stage.
D
F E I C
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 6 10 3 80 150 -55 150 UNIT V V V A A W
d
P
P
T
M
1
2
3
DIM A B C D d E F G H I J K L M P Q T
MILLIMETERS 15.9 MAX 4.8 MAX _ 20.0 + 0.3 _ 2.0 + 0.3 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 20.5 + 0.5 2.8 _ 5.45 + 0.2 _ 3.2 + 0.2 0.6+0.3/-0.1
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110, O:80~160
)
TEST CONDITION VCB=100V, IE=0 VEB=6V, IC=0 IC=25mA, IB=0 VCE=4V, IC=2A IC=4A, IB=0.4A VCE=12V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 100 55 TYP. 20 150 MAX. 10 10 160 1.0 V MHz pF UNIT A A V
SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT Cob
2001. 1. 10
Revision No : 1
L
G
J H
TO-3P(N)
1/2
TIP33C
VCE(sat) - I C
1 0.5 0.3 TRANSITION THERMAL RESISTANCE r th ( C/W) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COMMON EMITTER I C /C B =10
r th - t w
10 5 3
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE)
0.1 0.05 0.03
1 0.5 0.3
NO H
EAT S
INK
0.01 0.001
0.1 1 3 10 30 100 300 1K 2K PULSE WIDTH t w (sec)
0.01
0.1
1
10
BASE CURRENT I C (A)
h FE - I C
1K DC CURRENT GAIN h FE 500 300
Tc=125 C
fT - I E
CUT-OFF FREQUENCY f T (MHz)
VCE =4V
30
VCE =-12V
20
100 50 30
Tc=25 C Tc=-30 C
C 5 12 c= C T 25 C c= 0 T =-3 Tc
10
10 0.001
0.01
0.1
1
10
0 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
EMITTER CURRENT I E (A)
MAXIMUM POWER DISSIPATION PC (W)
Pc - Ta
100 80 60 40 20 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) COLLECTOR CURRENT I C (A)
Tc=Ta INFINITE HEAT SINK
SAFE OPERATING AREA
-30
I C MAX.(PULSED)*
-10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -1
I C MAX (CONTINUOUS)
30
DC
10 mS * OP Tc ER AT =2 5 I C ON
S* 0
* mS 1.0
* SINGLE NONREPETITIVE PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE V CE (V)
2001. 1. 10
Revision No : 1
2/2


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